Fundamental performance limits of carbon nanotube thin-film transistors achieved using hybrid molecular dielectrics.

نویسندگان

  • Vinod K Sangwan
  • Rocio Ponce Ortiz
  • Justice M P Alaboson
  • Jonathan D Emery
  • Michael J Bedzyk
  • Lincoln J Lauhon
  • Tobin J Marks
  • Mark C Hersam
چکیده

In the past decade, semiconducting carbon nanotube thin films have been recognized as contending materials for wide-ranging applications in electronics, energy, and sensing. In particular, improvements in large-area flexible electronics have been achieved through independent advances in postgrowth processing to resolve metallic versus semiconducting carbon nanotube heterogeneity, in improved gate dielectrics, and in self-assembly processes. Moreover, controlled tuning of specific device components has afforded fundamental probes of the trade-offs between materials properties and device performance metrics. Nevertheless, carbon nanotube transistor performance suitable for real-world applications awaits understanding-based progress in the integration of independently pioneered device components. We achieve this here by integrating high-purity semiconducting carbon nanotube films with a custom-designed hybrid inorganic-organic gate dielectric. This synergistic combination of materials circumvents conventional design trade-offs, resulting in concurrent advances in several transistor performance metrics such as transconductance (6.5 μS/μm), intrinsic field-effect mobility (147 cm(2)/(V s)), subthreshold swing (150 mV/decade), and on/off ratio (5 × 10(5)), while also achieving hysteresis-free operation in ambient conditions.

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عنوان ژورنال:
  • ACS nano

دوره 6 8  شماره 

صفحات  -

تاریخ انتشار 2012